Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4H-SiC

Capacitance transient study of a bistable deep level in e(-)-irradiated n-type 4H-SiC

Using capacitance transient techniques, a bistable center, here called FB-center, was observed in electron irradiated 4H-SiC. In configuration A, the deep level known as EH5 (Ea = EC − 1.07 eV) is detected in the deep level transient spectroscopy spectrum, whereas for configuration B no obvious deep level is observed in the accessible part of the band gap. Isochronal annealing revealed the tran...

Conductance Deep-Level Transient Spectroscopic Study of 4H-SiC MESFET and Traps

Characterization of Deep Levels in n-type and Semi-Insulating 4H-SiC Epitaxial Layers by Thermally Stimulated Current Spectroscopy

effect of oral presentation on development of l2 learners grammar

this experimental study has been conducted to test the effect of oral presentation on the development of l2 learners grammar. but this oral presentation is not merely a deductive instruction of grammatical points, in this presentation two hypotheses of krashen (input and low filter hypotheses), stevicks viewpoints on grammar explanation and correction and widdowsons opinion on limited use of l1...

Electron emission from deep level defects EL2 and EL6 in semi- insulating GaAs observed by positron drift velocity transient measurements